A new approach to growing graphene(石墨烯) greatly reduces problems that have plagued researchers in the past and clears a path to the crystalline form of graphite's use in sophisticated electronic devices of tomorrow. Findings of researchers at the Department of Energy's Oak Ridge1 National Laboratory demonstrate that hydrogen rather than carbon dictates3 the graphene grain shape and size, according to a team led by ORNL's Ivan Vlassiouk, a Eugene Wigner Fellow, and Sergei Smirnov, a professor of chemistry at New Mexico State University. This research is published in ACS Nano.
"Hydrogen not only initiates4 the graphene growth, but controls the graphene shape and size," Vlassiouk said. "In our paper, we have described a method to grow well-defined graphene grains that have perfect hexagonal(六边的) shapes pointing to the faultless single crystal structure."
In the past two years, graphene growth has involved the decomposition6(分解,腐烂) of carbon-containing gases such as methane7 on a copper8 foil under high temperatures, the so-called chemical vapor9 deposition10 method. Little was known about the exact process, but researchers knew they would have to gain a better understanding of the growth mechanism11 before they could produce high-quality graphene films.
Until now, grown graphene films have consisted of irregular- shaped graphene grains of different sizes, which were usually not single crystals.
"We have shown that, surprisingly, it is not only the carbon source and the substrate that dictate2 the growth rate, the shape and size of the graphene grain," Vlassiouk said. "We found that hydrogen, which was thought to play a rather passive role, is crucial for graphene growth as well. It contributes to both the activation12 of adsorbed molecules13 that initiate5 the growth of graphene and to the elimination14 of weak bonds at the grain edges that control the quality of the graphene."
Using their new recipe, Vlassiouk and colleagues have created a way to reliably synthesize(合成,综合) graphene on a large scale. The fact that their technique allows them to control grain size and boundaries may result in improved functionality of the material in transistors15, semiconductors16 and potentially hundreds of electronic devices.
Implications of this research are significant, according to Vlassiouk, who said, "Our findings are crucial for developing a method for growing ultra-large-scale single domain17 graphene that will constitute a major breakthrough toward graphene implementation18(实现,履行) in real-world devices."